Beijing Branch Heda days Semiconductor Co., Ltd. is a Blu-ray Physics, Chinese Academy of Sciences, Shanghai convergence of Investment Management lucky Blu-ray Technology Co., Ltd. and Singapore joint venture set up the first professional committed to silicon carbide wafer R & D, production and sales of Chinese-foreign joint venture high-tech enterprises. Company registered in Beijing Zhongguancun High-tech Park. The National Natural Science Foundation, National Academy of Sciences and other departments of the strong support of research funding, after years of fruitful research, developed with independent intellectual property rights of silicon carbide crystal growth furnaces and silicon carbide crystal growth technology and wafer processing technology, the first time from the establishment of a complete crystal growth, crystal cutting, grinding to a chemical mechanical polishing of silicon carbide wafer pilot production line, built one hundred clean room, the development of silicon carbide wafer surface treatment, cleaning, packaging technology .

R & D center: built in within the Institute of Physics, Beijing Zhongguancun
production base: SiC crystal growth base built in Hi-Tech Park in Xinjiang Shihezi Tianfu
Business Scope: research, development, production and carbonation silicon wafers, sales of products and import and export business
core technologies: proprietary devices and silicon carbide crystal SiC crystal growth processing technology
competitive advantage: technical and cost advantages
corporate values: integrity , respect, professionalism, innovation

Aim: R & D competitive prices, high quality of the silicon carbide wafer, a semiconductor solid-state lighting industry key enterprises, and promote China's third-generation semiconductor silicon carbide industry

company's key technologies: own R & D, design and manufacture of silicon carbide crystal growth equipment, the use of innovative technology roadmap to achieve the high temperature crystal growth of SiC crystal growth conditions such as key generation and control; self-developed silicon carbide crystal growth of key technologies: silicon carbide crystal growth zone and the optimal temperature and precise control of temperature gradients and regulation, carrier gas flow rate and pressure will remain stable, as well as seed and raw materials processing in particular. Own R & D key to silicon carbide wafer processing technology: for the super-hard silicon carbide, select the appropriate type, size and size distribution of the abrasive and the appropriate processing equipment to cutting, grinding, polishing; SiC wafer polishing (CMP). built one hundred clean room, the development of silicon carbide wafer surface treatment, cleaning, packaging technology, the product has reached means that the use of standards.

silicon carbide semiconductor market conditions early as the 1960 early, silicon carbide semiconductor physics, electronics and other aspects of the performance is far superior characteristics of silicon that has been widely acknowledged. After nearly five decades of development, silicon semiconductor industry has become the world's nearly trillion dollar a year industry giant, while the silicon carbide (SiC) as the representative of the third generation of the semiconductor industry is still in its infancy in 2005, the global semiconductor industry, the size of SiC $ 1 billion. This is because in the last 1960s, the growth of silicon technology has matured, and the possession of SiC crystal growth technology is only a matter of the late nineties. After decades of unremitting efforts, the world only a few universities and research institutions developed a SiC crystal growth and processing technology. In the industry, only a few companies able to provide silicon carbide wafer, the silicon carbide wafer domestic demand entirely on imports. Currently, the global silicon wafer market, expensive, high raw material costs accounted for the price of silicon carbide semiconductor device more than 40 percent, silicon carbide wafer price has become the third-generation semiconductor industry development bottleneck. Thus, using the most advanced SiC crystal growth technology, large-scale production, reduce production costs of silicon carbide wafer, the third generation will promote the rapid development of the semiconductor industry, expanding market demand.